Patent · US Active

Semiconductor device having a multi-layer diffusion barrier

US10749004B2 · kind B2 · utility

2Cited by

1References

18Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Jyh-Nan Lin · Hsinchu, TW
Ding-I Liu · Hsinchu, TW
Yuh-Ta Fan · Shuicheliao, TW

Key dates

Filing date	Jun 15, 2018
Grant date	Aug 18, 2020
Priority date	—
Expiry date	Sep 26, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/53295
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a metal layer, an insulating layer disposed above the metal layer, and a multi-layer diffusion barrier disposed on the metal layer between the metal layer and the insulating layer. The multi-layer diffusion barrier includes a first material layer including a metallic nitride and a second material layer including a metallic oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.