Gate structure with desired profile for semiconductor devices
US10749007B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Mar 14, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Apr 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures comprising a gate structure having different profiles at different portions of the gate structure are provided. In some examples, a semiconductor device includes a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.