Semiconductor device and method for fabricating the same
US10749013B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Oct 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a plurality of semiconductor fins, an epitaxy structure, a capping layer, and a contact. The epitaxy structure adjoins the semiconductor fins. The epitaxy structure has a plurality of protrusive portions. The capping layer is over a sidewall of the epitaxy structure. The contact is in contact with the epitaxy structure and the capping layer. The contact has a portion between the protrusive portions. The portion of the contact between the protrusive portions has a bottom in contact with the epitaxy structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.