GaN based adjustable driver current circuit
US10749514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Sep 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit for providing an adjustable output driver current for use in LiDAR or other similar GaN driver applications. The circuit creates an appropriate gate-to-source voltage, VGS, for a high-current GaN driver FET to obtain a desired, high slew-rate driver current, IDRV. An externally provided reference current is used to create the required VGS for the driver FET, which is stored on an external capacitor. The value of the capacitor far exceeds the relatively low input-capacitance of the GaN driver FET. When a pulse IDRV of desired value is needed, the voltage on the capacitor is impinged upon the gate of the driver FET, thereby creating the desired IDRV. The reference charging circuit replenishes any charge lost on the capacitor, so that the same desired IDRV can be obtained on the next command pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.