Efficient Power Conversion Corporation
65Patents
65Active
65Granted
56Portfolio score
Filing activity: Apr 7, 2010 → Jun 29, 2023 · 5 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8823012B2 | Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same | Electricity | 27 | Active |
| US8431960B2 | Dopant diffusion modulation in GaN buffer layers | Electricity | 25 | Active |
| US8404508B2 | Enhancement mode GaN HEMT device and method for fabricating the same | Electricity | 20 | Active |
| US8436398B2 | Back diffusion suppression structures | Electricity | 15 | Active |
| US8890168B2 | Enhancement mode GaN HEMT device | Electricity | 11 | Active |
| US8350294B2 | Compensated gate MISFET and method for fabricating the same | Electricity | 10 | Active |
| US9607876B2 | Semiconductor devices with back surface isolation | Electricity | 8 | Active |
| US9331061B2 | Parallel connection methods for high performance transistors | Electricity | 8 | Active |
| US9484862B2 | Device and method for bias control of class A power RF amplifier | Electricity | 7 | Active |
| US9214461B2 | GaN transistors with polysilicon layers for creating additional components | Electricity | 7 | Active |
| US8853749B2 | Ion implanted and self aligned gate structure for GaN transistors | Electricity | 7 | Active |
| US9667245B2 | High voltage zero QRR bootstrap supply | Electricity | 6 | Active |
| US10312131B2 | Semiconductor devices with back surface isolation | Electricity | 6 | Active |
| US9837438B2 | GaN transistors with polysilicon layers used for creating additional components | Electricity | 6 | Active |
| US9171911B2 | Isolation structure in gallium nitride devices and integrated circuits | Electricity | 6 | Active |
| US9035417B2 | Parasitic inductance reduction for multilayered board layout designs with semiconductor devices | Electricity | 5 | Active |
| US10790811B2 | Cascaded bootstrapping GaN power switch and driver | Electricity | 5 | Active |
| US10096702B2 | Multi-step surface passivation structures and methods for fabricating same | Electricity | 3 | Active |
| US10312260B2 | GaN transistors with polysilicon layers used for creating additional components | Electricity | 3 | Active |
| US9748347B2 | Gate with self-aligned ledged for enhancement mode GaN transistors | Electricity | 3 | Active |
| US10243546B2 | Enhancement mode FET gate driver IC | Electricity | 3 | Active |
| US8969918B2 | Enhancement mode gallium nitride transistor with improved gate characteristics | Electricity | 2 | Active |
| US10840742B2 | Wireless power receiver synchronization detection circuit | Emerging Cross-Sectional Technologies | 2 | Active |
| US9634555B2 | Method for operating a non-isolated switching converter having synchronous rectification capability suitable for power factor correction applications | Emerging Cross-Sectional Technologies | 2 | Active |
| US10749514B2 | GaN based adjustable driver current circuit | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.