Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide
US10753010B2 · kind B2 · utility
2Cited by
1References
10Claims
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Key dates
| Filing date | Sep 23, 2016 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Feb 24, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G77/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.