Semiconductor device including distributed write driving arrangement and method of operating same
US10755768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Jul 3, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1096
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes: a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; a column of segments, each segment including bit cells; each of the bit cells including a latch circuit and first and second pass gates connecting the corresponding LWB and LWB_bar lines to the latch circuit; and a distributed write driving arrangement. The distributed write driving arrangement includes: a global write driver including a first inverter connected between the GWB line and the LWB line, and a second inverter connected between the GWB_bar line and the LWB_bar line; and a local write driver included at an interior of each segment, each local write driver including a third inverter connected between the GWB line and the LWB line; and a fourth inverter connected between the GWB_bar line and the LWB_bar line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.