Inventor · Shanghai, CN

Li-Wen Wang

47Patents
7h-index
56Co-inventors
68Inventor score

Filing activity: Apr 8, 2005 → Oct 6, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
USD532138S1 Flashlight General 59 Expired
USD523576S1 Combination of camera and flashlight General 19 Expired
US9105326B2 Memory device and method for writing therefor Physics 8 Active
US9202557B2 Three-dimensional two-port bit cell Electricity 8 Active
US9449661B2 Memory device Physics 8 Active
US8773923B2 Memory device and method for writing therefor Physics 8 Active
USD542448S1 Flashlight General 7 Expired
US8477527B2 SRAM timing cell apparatus and methods Physics 7 Active
US8296698B2 High-speed SRAM Physics 6 Active
US9911473B1 Circuit with self-adjust pre-charged global data line Physics 5 Active
US8163907B2 Dihydropyridine calcium antagonist compounds, preparation methods, and medical uses thereof Human Necessities 4 Active
US9524920B2 Apparatus and method of three dimensional conductive lines Electricity 3 Active
US10354952B2 Memory cell having multi-level word line Electricity 2 Active
US10431295B2 Static random access memory and method of controlling the same Physics 2 Active
US8077517B2 Distributed VDC for SRAM memory Physics 2 Active
US10991420B2 Semiconductor device including distributed write driving arrangement and method of operating same Physics 2 Active
US11423974B2 Method of forming semiconductor device including distributed write driving arrangement Physics 2 Active
US8367710B2 Bicyclo-substituted pyrazolon azo derivatives, preparation process and pharmaceutical use thereof Chemistry; Metallurgy 2 Active
US10755768B2 Semiconductor device including distributed write driving arrangement and method of operating same Physics 2 Active
US9343140B2 Boosted read write word line Physics 1 Active
US8644087B2 Leakage-aware keeper for semiconductor memory Physics 1 Active
US9135971B2 Boosted read write word line Physics 1 Active
US10163759B2 Apparatus and method of three dimensional conductive lines Electricity 1 Active
US10510401B2 Semiconductor memory device using shared data line for read/write operation Physics 1 Active
US10163491B2 Memory circuit having shared word line Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.