Method of forming topcoat for patterning
US10755942B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Aug 24, 2017 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Aug 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.