Aluminum nitride based Silicon-on-Insulator substrate structure
US10755986B2 · kind B2 · utility
3Cited by
2References
24Claims
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Key dates
| Filing date | Mar 28, 2017 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | May 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A substrate structure includes a polycrystalline substrate, a plurality of thin film layers disposed on the polycrystalline substrate, a bonding layer coupled to at least a portion of the plurality of thin films, and a single crystal silicon layer joined to the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.