Inorganic wafer having through-holes attached to semiconductor wafer
US10756003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2018 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Nov 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68359
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.