Semiconductor devices including source/drain regions having multiple epitaxial patterns
US10756211B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2016 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Nov 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.