Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers

US10756231B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Thomas A. Kuhr · Durham, US
• Robert David Schmidt · Wake Forest, US
• Daniel Carleton Driscoll · Cary, US
• Brian T. Collins · Holly Springs, US

Key dates

• Filing date: Feb 5, 2019
• Grant date: Aug 25, 2020
• Expiry date: Feb 5, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.