Polycrystalline silicon ingot, polycrystalline silicon bar, and method for producing single crystal silicon
US10760180B2 · kind B2 · utility
0Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2017 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Oct 17, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline silicon ingot having a value of Te−Ts, ΔT, of 50° C. or less, wherein Ts and Te are the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° C./minute or less in the temperature range of 1400° C. or more is used as the production raw material for single crystal silicon. The present invention provides a polycrystalline silicon ingot or polycrystalline silicon rod suitable for stably producing single crystal silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.