Patent · US Active

Method for producing a semiconductor device by means of computer-aided development of test scenarios

US10761140B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Oliver Frank · Hannover, DE
Christoph Hazott · Linz, AT
Georg KREBELDER · Leonding, AT
Bruno Mariacher · Finkenstein, AT
Otto Pfabigan · Villach, AT
Sebastian Pointner · Braunau am Inn, AT
Ralf Reiterer · Linz, AT
Florian Starzer · Ansfelden, AT

Key dates

Filing date	Jul 18, 2018
Grant date	Sep 1, 2020
Priority date	—
Expiry date	Oct 10, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/20
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for producing a semiconductor device is described. In accordance with one example embodiment, the method comprises providing a virtual DUT in the form of a behavior model of the semiconductor device and developing at least one test in a test development environment for an automatic test equipment (ATE). In this case, commands are generated by means of the test development environment, which commands are converted into test signals by means of a software interface, which test signals are fed to the virtual DUT and are processable by the latter. The software interface processes response signals of the virtual DUT and reports information dependent on the response signals back to the test development environment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.