Patent · US Active

Photoresist and method of formation and use

US10761427B2 · kind B2 · utility

2Cited by
79References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 16, 2016
Grant dateSep 1, 2020
Priority date
Expiry dateMay 16, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/32139
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.