Method for manufacturing grooved MOSFET device based on two-step microwave plasma oxidation
US10763105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Jan 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a grooved-gate MOSFET device based on a two-step microwave plasma oxidation, including: etching a grooved gate, and oxidizing silicon carbide on a surface of the grooved gate to silicon dioxide by microwave plasma to form a grooved-gate oxide layer, the step of forming the grooved-gate oxide layer including: placing a silicon carbide substrate subjected to the grooved gate etching in a microwave plasma generating device; introducing a first oxygen-containing gas, heating generated oxygen plasma to a first temperature at a first heating rate, and performing low-temperature plasma oxidation at the first temperature and a first pressure; heating the oxygen plasma to a second temperature at a second heating rate, introducing a second oxygen-containing gas, and performing high-temperature plasma oxidation at the second temperature and a second pressure until a predetermined thickness of silicon dioxide is formed; stopping introduction of the oxygen-containing gas, and completing the reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.