Methods of encapsulation

US10763107B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Bart J. van Schravendijk · Sunnyvale, US
• Akhil Singhal · Portland, US
• Joseph Hung-chi Wei · Portland, US
• Bhadri N. Varadarajan · Beaverton, US
• Kevin McLaughlin · Troy, US
• Casey Holder · Oakland, US
• Ananda Banerji · West Linn, US

Key dates

• Filing date: Jan 10, 2020
• Grant date: Sep 1, 2020
• Expiry date: Jan 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/334
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300° C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.