Integrated circuit device and method of manufacturing the same
US10763163B2 · kind B2 · utility
1Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Jan 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.