Interconnects having long grains and methods of manufacturing the same
US10763207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing metallic interconnects for an integrated circuit includes forming an interconnect layout including at least one line including a non-diffusing material, forming a diffusing barrier layer on the line, forming an opening extending completely through the diffusing barrier layer and exposing a portion of the line, depositing a diffusing layer on the diffusing barrier layer such that a portion of the diffusing layer contacts the portion of the line, and thermally reacting the diffusing layer to form the metallic interconnects. Thermally reacting the diffusing layer chemically diffuses a material of the diffusing layer into the at least one line and causes at least one crystalline grain to grow along a length of the at least one line from at least one nucleation site defined at an interface between the portions of the diffusing layer and the line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.