Harsono S. Simka
32Patents
6h-index
59Co-inventors
68Inventor score
Filing activity: Feb 6, 2004 → Dec 17, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7220671B2 | Organometallic precursors for the chemical phase deposition of metal films in interconnect applications | Electricity | 46 | Expired |
| US7682891B2 | Tunable gate electrode work function material for transistor applications | Electricity | 16 | Active |
| US7470617B2 | Treating a liner layer to reduce surface oxides | Electricity | 13 | Active |
| US9932671B2 | Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) | Electricity | 8 | Active |
| US7354849B2 | Catalytically enhanced atomic layer deposition process | Electricity | 8 | Expired |
| US7851360B2 | Organometallic precursors for seed/barrier processes and methods thereof | Electricity | 7 | Active |
| US8779589B2 | Liner layers for metal interconnects | Electricity | 6 | Active |
| US8319287B2 | Tunable gate electrode work function material for transistor applications | Electricity | 6 | Active |
| US10957579B2 | Integrated circuit devices including a via and methods of forming the same | Electricity | 5 | Active |
| US7858525B2 | Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill | Electricity | 4 | Active |
| US7279084B2 | Apparatus having plating solution container with current applying anodes | Chemistry; Metallurgy | 4 | Expired |
| US7964746B2 | Copper precursors for CVD/ALD/digital CVD of copper metal films | Chemistry; Metallurgy | 3 | Active |
| US11043454B2 | Low resistivity interconnects with doped barrier layer for integrated circuits | Electricity | 3 | Active |
| US7476615B2 | Deposition process for iodine-doped ruthenium barrier layers | Electricity | 2 | Active |
| US8425987B2 | Surface charge enhanced atomic layer deposition of pure metallic films | Chemistry; Metallurgy | 2 | Active |
| US7749906B2 | Using unstable nitrides to form semiconductor structures | Emerging Cross-Sectional Technologies | 2 | Active |
| US11537898B2 | Generative structure-property inverse computational co-design of materials | Physics | 2 | Active |
| US10381315B2 | Method and system for providing a reverse-engineering resistant hardware embedded security module | Electricity | 1 | Active |
| US11087055B2 | Method of screening materials using forward conducting modes | Physics | 1 | Active |
| US7524765B2 | Direct tailoring of the composition and density of ALD films | Electricity | 1 | Active |
| US7704895B2 | Deposition method for high-k dielectric materials | Electricity | 1 | Active |
| US11769686B2 | Methods and apparatus for electroless plating dispense | Chemistry; Metallurgy | 0 | Active |
| US8344352B2 | Using unstable nitrides to form semiconductor structures | Emerging Cross-Sectional Technologies | 0 | Active |
| US10763207B2 | Interconnects having long grains and methods of manufacturing the same | Electricity | 0 | Active |
| US10825723B2 | Semiconductor device and method for making the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.