Patent · US Active

Method for manufacturing a semiconductor device having a Schottky contact

US10763339B2 · kind B2 · utility

0Cited by

5References

18Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Jens Peter Konrath · Villach, AT
Ronny Kern · Finkenstein, AT
Stefan Krivec · Villach, AT
Ulrich Schmid · Wien, AT
Laura Stoeber · Wien, AT

Key dates

Filing date	Feb 10, 2016
Grant date	Sep 1, 2020
Priority date	—
Expiry date	Mar 22, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.