Quantum dot devices with modulation doped stacks

US10763349B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Van H. Le · Portland, US
• Jeanette M. Roberts · North Plains, US
• James S. Clarke · Portland, US
• Zachary R. Yoscovits · Beaverton, US
• David J. Michalak · Portland, US

Key dates

• Filing date: Jun 29, 2016
• Grant date: Sep 1, 2020
• Expiry date: Jun 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, a doped layer, and a barrier layer disposed between the doped layer and the quantum well layer; and gates disposed above the quantum well stack. The doped layer may include a first material and a dopant, the first material may have a first diffusivity of the dopant, the barrier layer may include a second material having a second diffusivity of the dopant, and the second diffusivity may be less than the first diffusivity.