Power semiconductor device
US10763355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Mar 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device may include: a semiconductor layer; and a trench gate. The semiconductor layer may include: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type provided above the first semiconductor region and facing a side surface of the trench gate; and a third semiconductor region of the first conductive type provided above the second semiconductor region, separated from the first semiconductor region by the second semiconductor region, and facing the side surface of the trench gate. The first semiconductor region may include: a lower semiconductor region; and an upper semiconductor region disposed between the lower semiconductor region and the second semiconductor region and having a lower impurity concentration than the lower semiconductor region. The upper semiconductor region may be disposed at a shallower position than the trench gate and face the side surface of the trench gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.