Tsutomu Uesugi
22Patents
9h-index
23Co-inventors
75Inventor score
Filing activity: Mar 29, 1996 → Mar 22, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7777252B2 | III-V hemt devices | Electricity | 74 | Active |
| US6982459B2 | Semiconductor device having a vertical type semiconductor element | Electricity | 57 | Expired |
| US6072215A | Semiconductor device including lateral MOS element | Electricity | 50 | Expired |
| US6700175B1 | Vertical semiconductor device having alternating conductivity semiconductor regions | Electricity | 47 | Expired |
| US6177704A | Semiconductor device containing a lateral MOS transistor | Electricity | 35 | Expired |
| US9818856B2 | Semiconductor device with high electron mobility transistor | Electricity | 29 | Active |
| US7211839B2 | Group III nitride semiconductor device | Electricity | 28 | Expired |
| US6639260B2 | Semiconductor device having a vertical semiconductor element | Electricity | 25 | Expired |
| US5708286A | Insulated gate semiconductor device and fabrication method therefor | Electricity | 17 | Expired |
| US6060731A | Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region | Electricity | 7 | Expired |
| US6169299A | Semiconductor device | Electricity | 7 | Expired |
| US8008749B2 | Semiconductor device having vertical electrodes structure | Electricity | 3 | Expired |
| US8222675B2 | Nitride semiconductor device including gate insulating portion containing AIN | Electricity | 3 | Active |
| US8188514B2 | Transistor | Electricity | 3 | Active |
| US10381469B2 | Semiconductor device and method of manufacturing the same | Electricity | 2 | Active |
| US8110870B2 | Semiconductor device | Electricity | 2 | Active |
| US7800130B2 | Semiconductor devices | Electricity | 1 | Expired |
| US9735260B2 | III-V HEMT devices | Electricity | 1 | Active |
| US9337267B2 | Semiconductor device | Electricity | 0 | Active |
| US10763355B2 | Power semiconductor device | Electricity | 0 | Active |
| US9184271B2 | III-V HEMT devices | Electricity | 0 | Active |
| US8299498B2 | Semiconductor device having hetero junction | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.