Patent · US Active

Polycrystalline material having low mechanical strain; method for producing a polycrystalline material

US10766778B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Andreas Hartlieb · Stuttgart, DE
Heiko Stahl · Reutlingen, DE
Jochen Beintner · Wappingers Falls, US
Juergen Butz · Aspach, DE

Key dates

Filing date	May 30, 2018
Grant date	Sep 8, 2020
Priority date	—
Expiry date	May 30, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02595
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.