Inventor · Wappingers Falls, NY, US

Jochen Beintner

68Patents
16h-index
68Co-inventors
87Inventor score

Filing activity: Sep 26, 1997 → May 30, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7683428B2 Vertical Fin-FET MOS devices Electricity 212 Expired
US7470570B2 Process for fabrication of FinFETs Electricity 132 Active
US6177698A Formation of controlled trench top isolation layers for vertical transistors Electricity 100 Expired
US7018551B2 Pull-back method of forming fins in FinFets Electricity 59 Expired
US7091566B2 Dual gate FinFet Electricity 53 Expired
US7410844B2 Device fabrication by anisotropic wet etch Electricity 50 Active
US6924178B2 Oxide/nitride stacked in FinFET spacer process Electricity 35 Expired
US7087471B2 Locally thinned fins Electricity 35 Expired
US6265742A Memory cell structure and fabrication Electricity 34 Expired
US6998666B2 Nitrided STI liner oxide for reduced corner device impact on vertical device performance Electricity 29 Expired
US6967147B1 Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductor Emerging Cross-Sectional Technologies 24 Expired
US6093614A Memory cell structure and fabrication Electricity 22 Expired
US6566228B1 Trench isolation processes using polysilicon-assisted fill Electricity 21 Expired
US6323103A Method for fabricating transistors Electricity 21 Expired
US6184091A Formation of controlled trench top isolation layers for vertical transistors Electricity 20 Expired
US6013937A Buffer layer for improving control of layer thickness Emerging Cross-Sectional Technologies 18 Expired
US6746933B1 Pitcher-shaped active area for field effect transistor and method of forming same Electricity 16 Expired
US7087952B2 Dual function FinFET, finmemory and method of manufacture Electricity 16 Expired
US6204140A Dynamic random access memory Electricity 16 Expired
US7323374B2 Dense chevron finFET and method of manufacturing same Electricity 16 Expired
US6607984B1 Removable inorganic anti-reflection coating process Electricity 14 Expired
US6933183B2 Selfaligned source/drain FinFET process flow Electricity 14 Expired
US6579759B1 Formation of self-aligned buried strap connector Electricity 12 Expired
US6074903A Method for forming electrical isolation for semiconductor devices Electricity 12 Expired
US6602745B2 Field effect transistor and method of fabrication Electricity 12 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.