Patent · US Active

Protecting a substrate region during fabrication of a FET sensor

US10768138B2 · kind B2 · utility

0Cited by

4References

16Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Koen Martens · Wondelgem, BE
Nadine Collaert · Blanden, BE
Eddy Kunnen · Kessel-Lo, BE
Simone Severi · Leuven, BE

Key dates

Filing date	Dec 20, 2018
Grant date	Sep 8, 2020
Priority date	—
Expiry date	Dec 20, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/4145
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.