Alternative designs for magnetic recording assisted by a single spin hall effect (SHE) layer in the write gap
US10770104B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2019 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Sep 6, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0005
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. The SHE layer may contact one or both of the MP and TS, and has a front side at the air bearing surface (ABS) or recessed therefrom. A first current (I1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. A second current (I2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.