Fixed voltage sensing in a memory device
US10770125B2 · kind B2 · utility
4Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2017 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for sensing ferroelectric memory devices and apparatuses using the same have been disclosed. One such apparatus includes a ferroelectric memory cell coupled to a data line, a reference capacitance, and a common node coupled between the data line and the reference capacitance. A current mirror circuit is coupled to the data line and the reference capacitance. During a sense operation, the common node is configured to be at a fixed voltage and the current mirror circuit is configured to mirror displacement current from the reference capacitance to the ferroelectric memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.