Memory storage apparatus and forming method of resistive memory device thereof
US10770167B1 · kind B1 · utility
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2References
13Claims
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Key dates
| Filing date | Feb 20, 2019 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | May 15, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory storage apparatus and a forming method of a resistive memory device thereof are provided. A test forming voltage is applied to a redundant resistive memory device and a corresponding test current is read. A forming voltage applied to a main memory cell block is determined according to the test forming voltage, the test current, a forming current-voltage characteristic data and a target forming current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.