Plasma-enhanced anneal chamber for wafer outgassing
US10770272B2 · kind B2 · utility
3Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | Apr 5, 2017 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jan 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32899
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.