Patent · US Active

Semiconductor device and manufacturing method thereof

US10770358B2 · kind B2 · utility

4Cited by

11References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Mark van Dal · Linden, BE
Gerben Doornbos · Kessel-Lo, BE

Key dates

Filing date	Nov 27, 2018
Grant date	Sep 8, 2020
Priority date	—
Expiry date	Nov 27, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6219
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method of manufacturing a semiconductor device, a fin structure having a bottom portion, an intermediate portion disposed over the bottom portion and an upper portion disposed over the intermediate portion is formed. The intermediate portion is removed at a source/drain region of the fin structure, thereby forming a space between the bottom portion and the upper portion. An insulating layer is formed in the space. A source/drain contact layer is formed over the upper portion. The source/drain contact layer is separated by the insulating layer from the bottom portion of the fin structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.