Patent · US Active

Method and structure for dual sheet resistance trimmable thin film resistors

US10770538B2 · kind B2 · utility

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21Claims

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Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Christoph Dirnecker · Unterschleißheim, DE
Wolfgang Schwartz · Hamburg, DE
Doug Weiser · Plano, US
Joel M. Halbert · Tucson, US
Joseph Anthony DeSantis · Gilroy, US
Karsten Jens Spinger · Ingolstadt, DE

Key dates

Filing date	May 10, 2018
Grant date	Sep 8, 2020
Priority date	—
Expiry date	May 10, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/5228
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming an electronic device includes forming an opening through a dielectric layer located over a first resistive layer, the first resistive layer having a first sheet resistance. A second resistive layer is deposited over the dielectric layer and into the opening. The second resistive layer has a second sheet resistance different from the first sheet resistance. A portion of the second resistive layer is removed, thereby forming first and second noncontiguous portions of the second resistive layer, wherein the second portion of the second resistive layer contacts the first resistive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.