Semiconductor device and method for forming the same
US10770555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2017 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jul 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor device. The semiconductor device includes a gate structure disposed on a semiconductor substrate, a sidewall spacer disposed on sidewalls of the gate structure, a lightly-doped source/drain region formed in the semiconductor substrate on opposite sides of the gate structure, a source/drain region formed in the semiconductor substrate on opposite sides of the sidewall spacer, a halo implant region formed in the semiconductor substrate below the gate structure and adjacent to the lightly-doped source/drain region, and a counter-doping region formed in the semiconductor substrate below the gate structure and between the lightly-doped source/drain region and the halo implant region. The dopant concentration of the counter-doping region is lower than the dopant concentration of the halo implant region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.