Full beam metrology for X-ray scatterometry systems
US10775323B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2017 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/6116
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.