Method of simultaneous fabrication of SOI transistors and of transistors on bulk substrate

US10777552B2 · kind B2 · utility

Assignee

• STMicroelectronics (Rousset) SAS · FR

Inventor

• Franck Julien · La Penne-sur-Huveaune, FR

Key dates

• Filing date: Jul 26, 2018
• Grant date: Sep 15, 2020
• Expiry date: Jul 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D87/00

Abstract

The disclosure relates to a method of simultaneous fabrication of an MOS transistor of SOI type, and of first and second transistors on bulk substrate, comprising: a) providing a semiconductor layer on an insulating layer covering a semiconductor substrate; b) forming a mask comprising, above the location of the second transistor, a central opening which is less wide than the second transistor to be formed; c) plumb with the opening, entirely etching the semiconductor layer and insulating layer, hence resulting in remaining portions of the insulating layer at the location of the second transistor; d) growing the semiconductor by epitaxy as far as the upper level of the semiconductor layer; e) forming isolating trenches; and f) forming the gate insulators of the transistors, the gate insulator of the second transistor comprising at least one part of the said remaining portions of the insulating layer.