Inventor · La Penne-sur-Huveaune, FR

Franck Julien

13Patents
0h-index
14Co-inventors
37Inventor score

Filing activity: Feb 14, 2018 → Mar 29, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US12125899B2 MOS transistor having substantially parallelepiped-shaped insulating spacers Electricity 0 Active
US11640921B2 Process for fabricating an integrated circuit comprising a phase of forming trenches in a substrate and corresponding integrated circuit Electricity 0 Active
US11522057B2 Method for manufacturing an electronic device Electricity 0 Active
US10930757B2 Method of manufacturing MOS transistor spacers Electricity 0 Active
US10672644B2 Production of semiconductor regions in an electronic chip Electricity 0 Active
US12198973B2 Integrated circuit comprising trenches formed in a substrate Electricity 0 Active
US10332808B2 Device comprising multiple gate structures and method of simultaneously manufacturing different transistors Electricity 0 Active
US10777552B2 Method of simultaneous fabrication of SOI transistors and of transistors on bulk substrate Electricity 0 Active
US10553499B2 Production of semiconductor regions in an electronic chip Electricity 0 Active
US11121042B2 Production of semiconductor regions in an electronic chip Electricity 0 Active
US11424342B2 Fabrication process comprising an operation of defining an effective channel length for MOSFET transistors Electricity 0 Active
US11183505B2 Process for fabricating medium-voltage transistors and corresponding integrated circuit Electricity 0 Active
US11817484B2 Method for manufacturing an electronic device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.