Heterojunction bipolar transistor
US10777669B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Nov 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.