Method for producing a buried cavity structure

US10784147B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ines Uhlig · Dresden, DE
• Kerstin Kaemmer · Radebeul, DE
• Norbert Thyssen · Dresden, DE

Key dates

• Filing date: Jul 6, 2018
• Grant date: Sep 22, 2020
• Expiry date: Jul 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3065
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.