Silicon carbide power module

US10784235B2 · kind B2 · utility

Assignee

• Cree Fayetteville, Inc.

Inventors

• Brice McPherson · Fayetteville, US
• Sayan Seal · Fayetteville, US
• Zachary Cole · Bozeman, US
• Jennifer Stabach · Fayetteville, US
• Brandon Passmore · Fayetteville, US
• Ty R. McNutt · Columbia, US
• Alexander Lostetter · Fayetteville, US

Key dates

• Filing date: Jan 30, 2018
• Grant date: Sep 22, 2020
• Expiry date: Jan 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power module includes a case, a first terminal, a second terminal, and a number of silicon carbide semiconductor die. The case has a footprint less than 30 cm2. The silicon carbide semiconductor die are inside the case and coupled between the first terminal and the second terminal. The power module and the silicon carbide semiconductor die are configured such that in a first operating state the silicon carbide semiconductor die are capable of continuously blocking voltages greater than 650V between the first terminal and the second terminal, and in a second operating state the silicon carbide semiconductor die are capable of continuously passing currents greater than 200 A between the first terminal and the second terminal.