Image sensor and manufacturing method therefor

US10784296B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing (Shanghai) International Corporation · CN
• Semiconductor Manufacturing (Beijing) International Corporation · CN

Inventors

• Tzu-Yin Chiu · Marlboro, US
• Chong Wang · Shanghai, CN
• Haifang Zhang · 安丰镇, CN
• Xuanjie Liu · Shanghai, CN

Key dates

• Filing date: Apr 23, 2019
• Grant date: Sep 22, 2020
• Expiry date: Apr 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The image sensor includes: a semiconductor substrate; a first active region located on the semiconductor substrate; a doped semiconductor layer located on the first active region; and a contact located on the semiconductor layer, where the first active region includes: a first doped region and a second doped region abutting against the first doped region, wherein the second doped region is located at an upper surface of the first active region, and wherein the second doped region is formed by dopants in the semiconductor layer that are annealed to be diffused to a surface layer of the first doped region. The present disclosure may reduce leakage current and improve device performances.