Silicon carbide semiconductor device and manufacturing method therefor
US10784335B2 · kind B2 · utility
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Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.