Lateral heterojunctions between a first layer and a second layer of transition metal dichalcogenide

US10784353B2 · kind B2 · utility

Assignee

• King Abdullah University of Science and Technology · SA

Inventors

• Lain-Jong Li · Hsinchu, TW
• Hao Tang · Thuwal, SA
• Ming-Hui Chiu · Thuwal, SA

Key dates

• Filing date: Nov 15, 2017
• Grant date: Sep 22, 2020
• Expiry date: Nov 15, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A device comprising: at least one first layer, such as a graphene layer, at least one second layer of transition metal dichalcogenide, wherein the at least one first layer and the at least one second layer of transition metal dichalcogenide form at least one heterojunction. The first and second layers are laterally displaced but may overlap over a length of 0 nm to 500 nm. A low-resistance contact is formed. The device can be a transistor including a field effect transistor. The layers can be formed by chemical vapor deposition. The graphene can be heavily p-doped. Transistor performance data are described.