Non-conformal oxide liner and manufacturing methods thereof

US10784359B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ming-Ho Lin · Taipei, TW
• Chun-Heng Chen · Hsinchu, TW
• Xiong-Fei Yu · Hsinchu, TW
• Chi On Chui · Hsinchu, TW

Key dates

• Filing date: May 18, 2018
• Grant date: Sep 22, 2020
• Expiry date: May 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.