Semiconductor light emitting device
US10784405B2 · kind B2 · utility
1Cited by
41References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Jul 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.