Method of manufacturing a magnetoresistive random access memory device
US10784442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Nov 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.