Jun-Ho Jeong
43Patents
10h-index
71Co-inventors
78Inventor score
Filing activity: Mar 14, 2000 → Apr 1, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7914693B2 | Stamp for micro/nano imprint lithography using diamond-like carbon and method of fabricating the same | Performing Operations; Transporting | 61 | Active |
| US6505089B1 | Method for manufacturing a three-dimensional model by variable deposition and apparatus used therein | Physics | 51 | Expired |
| US8334148B2 | Methods of forming pattern structures | Electricity | 51 | Active |
| US6943117B2 | UV nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization | Emerging Cross-Sectional Technologies | 47 | Expired |
| US8803265B2 | Magnetic memory layer and magnetic memory device including the same | Electricity | 46 | Active |
| US7952914B2 | Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods | Emerging Cross-Sectional Technologies | 41 | Active |
| US8575753B2 | Semiconductor device having a conductive structure including oxide and non oxide portions | Electricity | 40 | Active |
| US7495984B2 | Resistive memory devices including selected reference memory cells | Physics | 38 | Active |
| US7672155B2 | Resistive memory devices including selected reference memory cells | Physics | 21 | Active |
| US8796042B2 | Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same | Physics | 15 | Active |
| US8174875B2 | Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods | Emerging Cross-Sectional Technologies | 10 | Active |
| US7554254B2 | Flat fluorescent lamp | Electricity | 8 | Active |
| US7871866B2 | Method of manufacturing semiconductor device having transition metal oxide layer and related device | Electricity | 8 | Active |
| US8486753B2 | Patterning method of metal oxide thin film using nanoimprinting, and manufacturing method of light emitting diode | Emerging Cross-Sectional Technologies | 7 | Active |
| US7994053B2 | Patterning method of metal oxide thin film using nanoimprinting, and manufacturing method of light emitting diode | Electricity | 7 | Active |
| US8083962B2 | Method for forming minute pattern and method for forming semiconductor memory device using the same | Electricity | 7 | Active |
| US7442316B2 | Microcontact printing method using imprinted nanostructure and nanostructure thereof | Emerging Cross-Sectional Technologies | 5 | Active |
| US7750336B2 | Resistive memory devices and methods of forming resistive memory devices | Electricity | 5 | Active |
| US8023311B2 | Resistive memory devices including selected reference memory cells operating responsive to read operations | Physics | 5 | Active |
| US8288289B2 | Method of fabricating semiconductor device | Electricity | 5 | Active |
| US7612969B2 | Magnetic memory device and method of fabricating the same | Emerging Cross-Sectional Technologies | 4 | Active |
| US8345467B2 | Resistive memory devices including selected reference memory cells operating responsive to read operations | Physics | 4 | Active |
| US10026965B2 | Method for manufacturing electrode structure for flexible energy storage device, electrode structure manufactured thereby, and energy storage device including same | Emerging Cross-Sectional Technologies | 1 | Active |
| US10784442B2 | Method of manufacturing a magnetoresistive random access memory device | Electricity | 1 | Active |
| US9791601B2 | Method for fabricating an embedded pattern using a transfer-based imprinting | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.