Electrostatic discharge protection apparatus and integrated circuit with multiple power domains
US10784679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Jul 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/921
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This application discloses an electrostatic discharge protection apparatus and an integrated circuit with multiple power domains. The electrostatic discharge protection apparatus includes a diode and an NMOS transistor. A positive electrode of the diode is coupled to a first interface, a negative electrode of the diode is coupled to a first electrode of the NMOS transistor, both a second electrode of the NMOS transistor and a gate electrode of the NMOS transistor are coupled to a second interface, and a substrate of the NMOS transistor is used for grounding. At least one electrostatic discharge protection apparatus may be disposed in the integrated circuit with multiple power domains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.