Mei Li
14Patents
8h-index
9Co-inventors
65Inventor score
Filing activity: Feb 16, 1990 → Aug 25, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5185535A | Control of backgate bias for low power high speed CMOS/SOI devices | Emerging Cross-Sectional Technologies | 77 | Expired |
| US6759491B2 | Simultaneous reverse and normal initiation of ATRP | Chemistry; Metallurgy | 70 | Expired |
| US5024965A | Manufacturing high speed low leakage radiation hardened CMOS/SOI devices | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5807771A | Radiation-hard, low power, sub-micron CMOS on a SOI substrate | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5137837A | Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5378909A | Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5140390A | High speed silicon-on-insulator device | Electricity | 30 | Expired |
| US5047356A | High speed silicon-on-insulator device and process of fabricating same | Electricity | 24 | Expired |
| US5523244A | Transistor fabrication method using dielectric protection layers to eliminate emitter defects | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5511036A | Flash EEPROM cell and array with bifurcated floating gates | Electricity | 6 | Expired |
| US5343424A | Split-gate flash EEPROM cell and array with low voltage erasure | Electricity | 6 | Expired |
| US5652448A | Nonvolatile memory device | Electricity | 4 | Expired |
| US5578515A | Method for fabricating gate structure for nonvolatile memory device comprising an EEPROM and a latch transistor | Electricity | 1 | Expired |
| US10784679B2 | Electrostatic discharge protection apparatus and integrated circuit with multiple power domains | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.